Title :
Measurement of the lifetimes of photo-excited carriers in type-I and type-II quantum well materials
Author :
Ru, Guoyun ; Choa, Fow-Sen ; Wei, Xing ; Chen, Gang ; Khurgin, Jacob B.
Author_Institution :
Dept. of CSEE, Univ. of Maryland, Baltimore, MD
Abstract :
Room temperature carrier lifetimes of both type-I and type-II InP-based multiple quantum wells near optical transparency were measured using the pump-probe technique. Longer carrier lifetime in the type-II sample was observed.
Keywords :
III-V semiconductors; carrier lifetime; indium compounds; semiconductor optical amplifiers; semiconductor quantum wells; transparency; InP; optical transparency; photoexcited carrier lifetimes; pump-probe technique; semiconductor optical amplifier; type-I quantum well materials; type-II quantum well materials; Absorption; Bleaching; Charge carrier lifetime; Nonlinear optics; Optical crosstalk; Optical pumping; Probes; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission; (060.4510) Optical communications; (250.5980) Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627932
