Title :
Growth and characteristics of epitaxial nanowires on a lattice-mismatched substrate
Author :
Chuang, Linus C. ; Moewe, Michael ; Crankshaw, Shanna ; Ben, Yu ; Chase, Chris ; Wang, Wei ; Kobayashi, Nobuhiko P. ; Chang-Hasnain, Connie
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA
Abstract :
Critical diameter of nanowires (NWs) grown on a lattice-mismatched substrate by MOCVD was experimentally determined to be inversely dependent on mismatch. Quantization effect is observed with narrow and blue-shifted micro-photoluminescence for InP NWs on Si.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; silicon; spectral line shift; InP-Si; MOCVD; Si; blue-shifted microphotoluminescence; epitaxial nanowires; lattice-mismatched substrate; quantization effect; Gold; III-V semiconductor materials; Indium phosphide; Lattices; MOCVD; Nanoparticles; Nanowires; Optical materials; Quantization; Substrates; (160.4760) Optical properties; (160.6000) Semiconductors, including MQW;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627933
