Growth and characteristics of epitaxial nanowires on a lattice-mismatched substrate

Author

Chuang, Linus C. ; Moewe, Michael ; Crankshaw, Shanna ; Ben, Yu ; Chase, Chris ; Wang, Wei ; Kobayashi, Nobuhiko P. ; Chang-Hasnain, Connie

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA

fYear

2006

fDate

21-26 May 2006

Firstpage

1

Lastpage

2

Abstract

Critical diameter of nanowires (NWs) grown on a lattice-mismatched substrate by MOCVD was experimentally determined to be inversely dependent on mismatch. Quantization effect is observed with narrow and blue-shifted micro-photoluminescence for InP NWs on Si.

Keywords

III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wires; silicon; spectral line shift; InP-Si; MOCVD; Si; blue-shifted microphotoluminescence; epitaxial nanowires; lattice-mismatched substrate; quantization effect; Gold; III-V semiconductor materials; Indium phosphide; Lattices; MOCVD; Nanoparticles; Nanowires; Optical materials; Quantization; Substrates; (160.4760) Optical properties; (160.6000) Semiconductors, including MQW;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on

Conference_Location

Long Beach, CA

Print_ISBN

978-1-55752-813-1

Electronic_ISBN

978-1-55752-813-1

Type

conf

DOI

10.1109/CLEO.2006.4627933

Filename

4627933