DocumentCode
2866230
Title
X-band MIC GaAs power FET amplifier module
Author
Hua Tserng ; Macksey, H. ; Doerbeck, F. ; Wisseman, W.
Author_Institution
Texas Instruments, Inc., Dallas, TX, USA
Volume
XXI
fYear
1978
fDate
15-17 Feb. 1978
Firstpage
122
Lastpage
123
Abstract
The design and fabrication of a 9-10GHz MIC three-stage GaAs FET amplifier module will be described. An output power of 1.6W with 20dB gain and 28% efficiency has been achieved.
Keywords
Bandwidth; Driver circuits; FETs; Frequency; Gallium arsenide; Microstrip; Microwave integrated circuits; Power amplifiers; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location
San Francisco, CA, USA
Type
conf
DOI
10.1109/ISSCC.1978.1155870
Filename
1155870
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