DocumentCode :
2866239
Title :
ZnO nanowire-based Schottky-barrier-type UV light-emitting diodes
Author :
Zhang, Qifeng ; Wang, Yanxin ; Sun, Hui ; Wu, Jinlei
Author_Institution :
Dept. of Electron., Peking Univ., Beijing
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.
Keywords :
Schottky barriers; electrodes; gold; light emitting diodes; nanowires; zinc compounds; Schottky barrier type; UV light emitting diodes; ZnO; gold electrode; nanowire; Current density; Electrodes; Gold; Light emitting diodes; Nanowires; Resists; Scanning electron microscopy; Schottky barriers; Semiconductor diodes; Zinc oxide; (160.2540) Fluorescent and luminescent materials; (230.3670) Light-emitting diodes; (260.7190) Ultraviolet;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4627935
Filename :
4627935
Link To Document :
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