DocumentCode
2866239
Title
ZnO nanowire-based Schottky-barrier-type UV light-emitting diodes
Author
Zhang, Qifeng ; Wang, Yanxin ; Sun, Hui ; Wu, Jinlei
Author_Institution
Dept. of Electron., Peking Univ., Beijing
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Electrically driven UV light-emitting device based on ZnO nanowires was prepared by forming Schottky barrier between the nanowires and Au electrode. The emission is noticeable at RT and the wavelength maximum is around 385 nm.
Keywords
Schottky barriers; electrodes; gold; light emitting diodes; nanowires; zinc compounds; Schottky barrier type; UV light emitting diodes; ZnO; gold electrode; nanowire; Current density; Electrodes; Gold; Light emitting diodes; Nanowires; Resists; Scanning electron microscopy; Schottky barriers; Semiconductor diodes; Zinc oxide; (160.2540) Fluorescent and luminescent materials; (230.3670) Light-emitting diodes; (260.7190) Ultraviolet;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4627935
Filename
4627935
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