DocumentCode :
2866243
Title :
A 1-W 2-6GHz amplifier utilizing a discretely packaged GaAs FET
Author :
Wade, P.
Author_Institution :
Microwave Semiconductor Corp., Somerset, NJ, USA
Volume :
XXI
fYear :
1978
fDate :
15-17 Feb. 1978
Firstpage :
120
Lastpage :
121
Abstract :
A 100% bandwidth GaAs FET power amplifier utilizing a discretely packaged GaAs FET will be presented. The design of the package - hermetic stripline - the microstrip circuit, microwave performance characteristics and high-power impedances will be covered.
Keywords :
Bandwidth; Broadband amplifiers; Chebyshev approximation; Circuits; FETs; Gallium arsenide; Impedance; Metallization; Scattering parameters; Semiconductor device packaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ISSCC.1978.1155871
Filename :
1155871
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2866243
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