• DocumentCode
    2866360
  • Title

    A 350W, 2GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65MHz envelope signal

  • Author

    Ahmed, A. ; Babesku, J. ; Schultz, J. ; Ladhani, Hussain H. ; Jones, Jeffrey K. ; Bokatius, M. ; Hart, P.

  • Author_Institution
    Freescale Semiconductor Tempe AZ 85283, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this paper we demonstrate high gain, high efficiency, single and balanced Doherty power amplifiers (PAs) that have the ability to transmit signals which occupy the full frequency band from 1930MHz–1995MHz. The PAs have been designed using a new generation of Freescale LDMOS power transistors [1], in which the drain side video-bandwidth (VBW) has been enhanced. For the first time we will show the ability of the PA to handle wideband envelope signals (> 80MHz) with excellent nonlinearity correction using Digital Pre-distortion (DPD). Narrow band as well as wideband DPD measurement results will be presented for single and balanced Doherty PAs including driver stages. These RF Doherty PAs are targeted for use in next generation wideband wireless communication systems.
  • Keywords
    Frequency measurement; Multiaccess communication; Power amplifiers; Power measurement; Power transistors; Wideband; Balanced Doherty; digital predistortion; memory effects; nonlinearity; power amplifiers; wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259579
  • Filename
    6259579