DocumentCode :
2866360
Title :
A 350W, 2GHz, 44% efficient LDMOS power amplifier design with capability to handle a wideband 65MHz envelope signal
Author :
Ahmed, A. ; Babesku, J. ; Schultz, J. ; Ladhani, Hussain H. ; Jones, Jeffrey K. ; Bokatius, M. ; Hart, P.
Author_Institution :
Freescale Semiconductor Tempe AZ 85283, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
In this paper we demonstrate high gain, high efficiency, single and balanced Doherty power amplifiers (PAs) that have the ability to transmit signals which occupy the full frequency band from 1930MHz–1995MHz. The PAs have been designed using a new generation of Freescale LDMOS power transistors [1], in which the drain side video-bandwidth (VBW) has been enhanced. For the first time we will show the ability of the PA to handle wideband envelope signals (> 80MHz) with excellent nonlinearity correction using Digital Pre-distortion (DPD). Narrow band as well as wideband DPD measurement results will be presented for single and balanced Doherty PAs including driver stages. These RF Doherty PAs are targeted for use in next generation wideband wireless communication systems.
Keywords :
Frequency measurement; Multiaccess communication; Power amplifiers; Power measurement; Power transistors; Wideband; Balanced Doherty; digital predistortion; memory effects; nonlinearity; power amplifiers; wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259579
Filename :
6259579
Link To Document :
بازگشت