Title :
Microwave GaAs FET monolithic circuits
Author :
Higgins, Jane ; Gupta, Arpan ; Robinson, G. ; Daniel Ch´en
Author_Institution :
Rockwell International, Thousand Oaks, CA, USA
Abstract :
Performance of semi-insulating GaAs as a microwave substrate using different transmission line types will be covered. Measurements indicate that attenuation is low enough (≃ 0.5dB/cm at 12GHz) to permit fabrication of monolithic amplifiers. Amplifiers with 4.5dB gain from 4-12GHz will also be discussed.
Keywords :
Broadband amplifiers; Coplanar transmission lines; Dielectric substrates; Distributed parameter circuits; Gallium arsenide; Insertion loss; Insulation; Microstrip; Microwave FETs; Microwave circuits;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155878
