DocumentCode

2866390

Title

A 6ns 4Kb bipolar RAM using switched load resistor memory cell

Author

Inadachi, M. ; Homma, Noriyasu ; Yamaguchi, Kazuhiro ; Ikeda, Takashi ; Higuchi, H.

Author_Institution

Hitachi Central Research Lab., Tokyo, Japan

Volume

XXII

fYear

1979

fDate

14-16 Feb. 1979

Firstpage

108

Lastpage

109

Keywords

Capacitance; Circuits; Decoding; Frequency; Power dissipation; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

conf

DOI

10.1109/ISSCC.1979.1155879

Filename

1155879