Title :
A 6ns 4Kb bipolar RAM using switched load resistor memory cell
Author :
Inadachi, M. ; Homma, Noriyasu ; Yamaguchi, Kazuhiro ; Ikeda, Takashi ; Higuchi, H.
Author_Institution :
Hitachi Central Research Lab., Tokyo, Japan
Keywords :
Capacitance; Circuits; Decoding; Frequency; Power dissipation; Random access memory; Read-write memory; Resistors; Space vector pulse width modulation;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155879
