• DocumentCode
    2866511
  • Title

    A 50MHz–16GHz low distortion SOI voltage controlled attenuator IC with IIP3 > +38dBm and control range of > 25dB

  • Author

    Franzwa, Ed ; Ellis, Alan ; Nelson, Brad ; Granger-Jones, Marcus ; Valenti, Greg

  • Author_Institution
    RFMD, San Jose, CA, 95134, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper discusses a 50MHz–16GHz wideband, low distortion, voltage controlled attenuator (VCA) on silicon on insulator (SOI) CMOS technology. The VCA design is based on passive FET absorptive attenuator structures but uses stacked FET techniques to dramatically improve the distortion characteristics and signal handling capability. It leverages a surface mount compatible flip chip IC in an over molded laminate package to minimize parasitics. The VCA achieves >25dB attenuation range, IIP3 of > +38dBm and IP1dB > 25dBm up to 16GHz. The laminate and flip chip combination maintains a return loss of better than −8dB over the entire frequency and attenuation range. The insertion loss at 16GHz is 5.0dB at minimum attenuation.
  • Keywords
    Attenuation; Attenuators; FETs; Flip chip; Frequency control; Temperature control; Voltage control; Attenuator; CMOS attenuator; IP3; SOI; VCA; VVA; broadband attenuator; linear attenuator; linear-in-dB; stacked; voltage controlled attenuator; voltage variable attenuator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259585
  • Filename
    6259585