DocumentCode
2866511
Title
A 50MHz–16GHz low distortion SOI voltage controlled attenuator IC with IIP3 > +38dBm and control range of > 25dB
Author
Franzwa, Ed ; Ellis, Alan ; Nelson, Brad ; Granger-Jones, Marcus ; Valenti, Greg
Author_Institution
RFMD, San Jose, CA, 95134, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper discusses a 50MHz–16GHz wideband, low distortion, voltage controlled attenuator (VCA) on silicon on insulator (SOI) CMOS technology. The VCA design is based on passive FET absorptive attenuator structures but uses stacked FET techniques to dramatically improve the distortion characteristics and signal handling capability. It leverages a surface mount compatible flip chip IC in an over molded laminate package to minimize parasitics. The VCA achieves >25dB attenuation range, IIP3 of > +38dBm and IP1dB > 25dBm up to 16GHz. The laminate and flip chip combination maintains a return loss of better than −8dB over the entire frequency and attenuation range. The insertion loss at 16GHz is 5.0dB at minimum attenuation.
Keywords
Attenuation; Attenuators; FETs; Flip chip; Frequency control; Temperature control; Voltage control; Attenuator; CMOS attenuator; IP3; SOI; VCA; VVA; broadband attenuator; linear attenuator; linear-in-dB; stacked; voltage controlled attenuator; voltage variable attenuator;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259585
Filename
6259585
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