Title :
Silicon MESFET circuit performance for VLSI
Author :
Houston, T. ; Everett, C. ; Darley, H. ; Taylor, Gareth
Author_Institution :
Texas Instruments, Inc., Dallas, TX, USA
Abstract :
Sub-femto Joule silicon MESFET ring oscillator data, which compare favorably with GaAs MESFET results in the literature, will be reported. Measurements on an output amplifier and on a divide-by-two circuit will also be discussed.
Keywords :
Delay; Driver circuits; Gallium arsenide; Inverters; MESFET circuits; MOS devices; Metallization; Ring oscillators; Silicon; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155887
