DocumentCode
2866621
Title
Common drain flip-chip GaAs FET oscillators
Author
Camisa, R. ; Klatskin, J. ; Sechi, F.
Author_Institution
RCA Laboratories, Princeton, NJ, USA
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
160
Lastpage
161
Abstract
GaAs FET oscillators, which exploit the superior heat sinking of flip-chip devices, will be described, citing fixed tuned (37mW, 24%, 8.5GHz) and varactor-controlled oscillators tunable over a 35% frequency band, using this approach.
Keywords
Circuits; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Ohmic contacts; Power generation; Thermal management; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1155892
Filename
1155892
Link To Document