Title :
Common drain flip-chip GaAs FET oscillators
Author :
Camisa, R. ; Klatskin, J. ; Sechi, F.
Author_Institution :
RCA Laboratories, Princeton, NJ, USA
Abstract :
GaAs FET oscillators, which exploit the superior heat sinking of flip-chip devices, will be described, citing fixed tuned (37mW, 24%, 8.5GHz) and varactor-controlled oscillators tunable over a 35% frequency band, using this approach.
Keywords :
Circuits; Frequency; Gallium arsenide; Microwave FETs; Microwave oscillators; Ohmic contacts; Power generation; Thermal management; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155892
