Title :
A 10-Gbps In0.53Ga0.47As p-i-n photodiode receiver on metamorphic InGaP buffered GaAs substrate
Author :
Liao, Yu-Sheng ; Lin, Gong-Ru ; Kuo, Hao-Chung ; Feng, Kai-Ming ; Feng, Milton
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
In0.53Ga0.47As p-i-n photodiode based OC-192 receiver grown on linearly graded metamorphic InxGa1-xP buffered GaAs with ultra-low dark current of 3.6 fA/mum2, switching response of 41 ps, bit-error-rate of 10-12, and sensitivity of -19 dBm are reported.
Keywords :
III-V semiconductors; buffer layers; dark conductivity; gallium arsenide; gallium compounds; indium compounds; optical receivers; p-i-n photodiodes; In0.53Ga0.47As-InxGa1-xP-GaAs; PINPD; bit-error-rate; metamorphic buffer layer; optical receiver; p-i-n photodiode receiver; time 41 ps; ultra-low dark current; Dark current; Frequency; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Optical buffering; Optical receivers; PIN photodiodes; Probes; Substrates; (040.5160) Photodetectors; (060.2380) Fiber optics sources and detectors;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4627958
