DocumentCode :
2866642
Title :
PSK modulator using dual-gate FETs
Author :
Wei Tsai ; Tung Tsai ; Paik, S. ; Carnes, I.
Author_Institution :
Raytheon Company, Waltham, MA, USA
Volume :
XXII
fYear :
1979
fDate :
14-16 Feb. 1979
Firstpage :
164
Lastpage :
165
Abstract :
A ∼1ns biphase modulator using dual-gate FETS will be described. The modulator has a balanced gain of 3dB in both phase states, with phase accuracy within 
over 400MHz in X band.
over 400MHz in X band.Keywords :
Amplitude modulation; Circuits; FETs; Gallium arsenide; Insertion loss; Phase modulation; Phase shift keying; Radio frequency; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1979.1155894
Filename :
1155894
Link To Document :
