DocumentCode :
2866670
Title :
Optical characterization of a leaky-mode polysilicon photodetector using near-field scaning optical microscopy
Author :
Yuan, G. ; Nikkel, P. ; Thangaraj, C. ; Chen, T.W. ; Pownall, R. ; Iguchi, A. ; Lear, K.L.
Author_Institution :
Electr. & Comput. Eng. Dept., Colorado State Univ., Fort Collins, CO
fYear :
2006
fDate :
21-26 May 2006
Firstpage :
1
Lastpage :
2
Abstract :
Near-field scanning optical microscopy was used to characterize the light absorption capability of a leaky-mode coupled polysilicon photodetector fabricated for CMOS on-chip optical interconnects. The observed results are in good agreement with modal calculations.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated optics; integrated optoelectronics; near-field scanning optical microscopy; optical interconnections; photodetectors; silicon; CMOS on-chip optical interconnects; leaky-mode photodetector; light absorption; near-field scanning optical microscopy; polysilicon photodetector; Absorption; CMOS technology; Optical coupling; Optical films; Optical interconnections; Optical microscopy; Optical propagation; Optical waveguides; Photodetectors; Photodiodes; (000.0000) General;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
Type :
conf
DOI :
10.1109/CLEO.2006.4627961
Filename :
4627961
Link To Document :
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