Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism

Author

Liu, Y.H. ; Tu, Y.L. ; Lain, W.Y. ; Chan, B.W. ; Chi, M.

Author_Institution

Adv. Process Technol. Div., Worldwide Semicond. Manuf. Corp. WSMC, Hsinchu, Taiwan

fYear

2000

fDate

2000

Firstpage

153

Lastpage

156

Abstract

We found that smaller top CD of self-aligned contact results in less polymer formation but severe bottom nitride loss after SAC oxide etching. This leads to a two-stage mechanism of SAC oxide etching. This mechanism can also describe correctly the effects of gas flow ratio and process pressure. An ideal SAC etching should have controlled flow of radicals with all uniform SAC structure, and a self-limiting mechanism of polymer formation

Keywords

chemical mechanical polishing; integrated circuit metallisation; sputter etching; RIE; SAC oxide etching; bottom nitride loss; contact size dependence; gas flow ratio; polymer formation; process pressure; self-aligned contact etching; self-limiting mechanism; top CD; two-stage mechanism; Argon; Etching; Gaussian processes; Manufacturing industries; Manufacturing processes; Plasma measurements; Polymers; Protection; Radio frequency; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI

Conference_Location

Boston, MA

ISSN

1078-8743

Print_ISBN

0-7803-5921-6

Type

conf

DOI

10.1109/ASMC.2000.902578

Filename

902578

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2866672