Title :
Contact size dependence of highly selective self-aligned contact etching with polymer formation and its mechanism
Author :
Liu, Y.H. ; Tu, Y.L. ; Lain, W.Y. ; Chan, B.W. ; Chi, M.
Author_Institution :
Adv. Process Technol. Div., Worldwide Semicond. Manuf. Corp. WSMC, Hsinchu, Taiwan
Abstract :
We found that smaller top CD of self-aligned contact results in less polymer formation but severe bottom nitride loss after SAC oxide etching. This leads to a two-stage mechanism of SAC oxide etching. This mechanism can also describe correctly the effects of gas flow ratio and process pressure. An ideal SAC etching should have controlled flow of radicals with all uniform SAC structure, and a self-limiting mechanism of polymer formation
Keywords :
chemical mechanical polishing; integrated circuit metallisation; sputter etching; RIE; SAC oxide etching; bottom nitride loss; contact size dependence; gas flow ratio; polymer formation; process pressure; self-aligned contact etching; self-limiting mechanism; top CD; two-stage mechanism; Argon; Etching; Gaussian processes; Manufacturing industries; Manufacturing processes; Plasma measurements; Polymers; Protection; Radio frequency; Semiconductor device manufacture;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-5921-6
DOI :
10.1109/ASMC.2000.902578
