DocumentCode :
2866677
Title :
Comparison of 4.5 kV SiC JBS and Si PiN diodes for 4.5 kV Si IGBT anti-parallel diode applications
Author :
Duong, Tam ; Hefner, Allen ; Hobart, Karl ; Ryu, Sei-Hyung ; Grider, David ; Berning, David ; Ortiz-Rodriguez, Jose M. ; Imhoff, Eugene ; Sherbondy, Jerry
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
1057
Lastpage :
1063
Abstract :
A new 60 A, 4.5 kV SiC JBS diode is presented, and its performance is compared to a Si PiN diode used as the antiparallel diode for 4.5 kV Si IGBTs. The I-V, C-V, reverse recovery, and reverse leakage characteristics of both diode types are measured. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, double-pulse switching test system. The results indicate that SiC JBS diodes reduce IGBT turn-on switching loses by about a factor of three in practical applications. Furthermore, the peak IGBT current at turn-on is typically reduced by a factor of six, resulting in substantially lower IGBT stress. Circuit simulator models for the 4.5 kV SiC JBS and Si PiN diodes are also developed and compared with measurements.
Keywords :
Schottky barriers; Schottky diodes; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; silicon; silicon compounds; IGBT anti-parallel diode; JBS diodes; Si; SiC; current 60 A; double-pulse switching test system; insulated gate bipolar transistors; junction barrier Schottky; p-i-n diodes; reverse leakage; reverse recovery; turn-on switching loss; voltage 4.5 kV; Current measurement; Insulated gate bipolar transistors; PIN photodiodes; Schottky diodes; Silicon; Silicon carbide; Solids; Junction Barrier Schottky (JBS); Silicon carbide (SiC); high-frequency; hybrid halfbridge module; medium-voltage; power systems;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744725
Filename :
5744725
Link To Document :
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