Title :
On understanding and driving SiC power JFETs
Author :
Abuishmais, Ibrahim ; Basu, Supratim ; Undeland, Tore M.
Author_Institution :
Dept. of Electr. Power Eng., NTNU, Trondheim, Norway
Abstract :
With the commercial availability of normally-off three-terminal SiC VJFETs, their acceptance is expected to grow significantly in consideration to their excellent low switching loss characteristics, high temperature operation and high voltage rating capabilities. This paper investigates the influence of the gate drive on the switching characteristics of the device and highlights design strategies for driving them.
Keywords :
junction gate field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; SiC; high temperature operation; high voltage rating; low switching loss characteristics; power JFET; three-terminal VJFET; Capacitance; Capacitors; Driver circuits; JFETs; Logic gates; Silicon carbide; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744727
