Title :
Gate associated transistor
Author :
Kondo, Hiroki ; Yukimoto, Y. ; Shirahata, Koichi
Author_Institution :
Mitsubishi Electric Corp., Itami, Japan
Abstract :
A bipolar transistor, using the cascade connection of a bipolar transistor and JFET to obtain high frequency and high voltage power transistors, will be discussed. Transistors with VCEO of 500V, a cutoff frequency of 80MHz and a current rating of 10-20A were fabricated.
Keywords :
Bipolar transistors; Conductivity; Cutoff frequency; Diffusion processes; Electron tubes; Equivalent circuits; FETs; Iron; Pulse amplifiers; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155912
