Title :
Proximity effect correction in EB lithography for VSLI microfabrication
Author :
Sugiyama, N. ; Saitoh, K. ; Shimizu, Kazuo
Author_Institution :
VLSI Technology Research Assos/Cooperative Laboratories, Kawasaki, Japan
Abstract :
This paper will present a two-step automatic technique for proximity effect correction required in the small dimension exposure of EB lithography for VLSI microfabrication: 1) incident electron EB intensity is varied on each pattern and 2) dot beam is add-exposed at a corner or near pattern for shape dimension adjustment.
Keywords :
Computer simulation; Distribution functions; Least squares methods; Lithography; Proximity effect; Shape; Very large scale integration;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155914
