DocumentCode :
2867025
Title :
Stepper exposure field uniformity mapping using electrical critical dimension measurements
Author :
McCarson, Brian L. ; Salisbury, Todd
Author_Institution :
Motorola Semiconductor Products Sector, Mesa, AZ, USA
fYear :
2000
fDate :
2000
Firstpage :
264
Lastpage :
273
Abstract :
The uniformity of stepper exposure fields was evaluated and quantified by analyzing the electrical critical dimensions of patterned arrays of dense and isolated bridge resistors. The objective of this effort was to aid in the understanding, and ultimately reduce the occurrence of, stepper field uniformity issues that can degrade device performance
Keywords :
bridge instruments; integrated circuit measurement; photolithography; bridge resistor array; electrical critical dimension measurement; i-line lithography; stepper exposure field uniformity mapping; Bridge circuits; Bridges; Electric resistance; Electric variables measurement; Electrical resistance measurement; Lenses; Resistors; Semiconductor device manufacture; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5921-6
Type :
conf
DOI :
10.1109/ASMC.2000.902599
Filename :
902599
Link To Document :
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