Title :
Cross-coupled charge-transfer sense amplifier
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
A double cross-coupled MOS charge-transfer sense amplifier for application to dynamic one-device cell memory arrays will be presented. Sensitivity is better than 1OmV.
Keywords :
Capacitance; Cities and towns; Latches; MOS capacitors; Power supplies; Preamplifiers; Pulse amplifiers; Solid state circuits; Timing; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155920
