Title :
250°C SiC high density power module development
Author :
Ning, Puqi ; Wang, Fred ; Ngo, Khai D T
Author_Institution :
Nat. Transp. Res. Center, Oak Ridge Nat. Lab., Knoxville, TN, USA
Abstract :
Taking full advantage of SiC devices, a team from Oak Ridge National Laboratory, the University of Tennessee and Virginia Polytechnic Institute and State University have designed, developed, and tested a phase-leg power module based on a high temperature wirebond package. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that our design process produced a high density power module that operated successfully at high junction temperatures.
Keywords :
JFET circuits; high-temperature electronics; integrated circuit design; integrated circuit packaging; integrated circuit testing; lead bonding; power supply circuits; silicon compounds; wide band gap semiconductors; Oak Ridge National Laboratory; SiC; University of Tennessee; Virginia Polytechnic Institute and State University; cooling system designs; gate drive; high density power module development; high junction temperatures; high temperature wirebond package; phase-leg power module; temperature 250 C; Heat sinks; Layout; Logic gates; Multichip modules; Silicon carbide; Switches;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744757
