• DocumentCode
    2867222
  • Title

    A 20Gb/s Burst-Mode CDR Circuit Using Injection-Locking Technique

  • Author

    Lee, Jri ; Liu, Mingchung

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    11-15 Feb. 2007
  • Firstpage
    46
  • Lastpage
    586
  • Abstract
    The design and experimental verification of a 20Gb/s CDR circuit based on injection-locking technique is presented. Fabricated in 90nm CMOS technology, this circuit achieves a BER of <10-9 for both continuous and burst modes. It has tunability of over 800Mb/s while consuming 175mW. The re-acquisition time of this CDR is 1b interval.
  • Keywords
    CMOS integrated circuits; error statistics; synchronisation; 175 mW; 20 Gbit/s; 90 nm; CMOS technology; bit error rate; clock recovery; data recovery; injection locking; CMOS technology; Circuits; Clocks; Filters; Frequency; Inductors; Jitter; Phase locked loops; Voltage control; Voltage-controlled oscillators;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0853-9
  • Electronic_ISBN
    0193-6530
  • Type

    conf

  • DOI
    10.1109/ISSCC.2007.373580
  • Filename
    4242257
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2867222