DocumentCode :
2867240
Title :
A 120°C ambient temperature forced air-cooled normally-off SiC JFET automotive inverter system
Author :
Bortis, Dominik ; Wrzecionko, Benjamin ; Kolar, Johann W.
Author_Institution :
Power Electron. Syst. Lab., ETH Zurich, Zurich, Switzerland
fYear :
2011
fDate :
6-11 March 2011
Firstpage :
1282
Lastpage :
1289
Abstract :
The degree of integration of power electronic converters in current hybrid electric vehicles can be increased by mitigation of special requirements of these converters, especially those regarding ambient air and cooling fluid temperature levels. Today, converters have their own cooling circuit or are placed far away from hot spots caused by the internal combustion engine and its peripheral components. In this paper, it is shown, how the use of SiC power semiconductors operated at a junction temperature of 250°C and active control electronics cooling employing a Peltier element can help to build an air-cooled inverter system for 120°C ambient temperature. First, a detailed analysis of the operating temperature ranges of power semiconductors, thermal interface materials, capacitors and control electronics is conducted. Then, concepts for deriving a converter design that takes the electrical, mechanical and thermal requirements of the components and their interaction into account are shown. The inverter and the active Peltier cooling of the control electronics are dimensioned. Finally, a hardware prototype with discrete power semiconductor devices and thus with a junction temperature limit of 175°C is shown to validate the theoretical considerations.
Keywords :
automotive electronics; cooling; hybrid electric vehicles; invertors; junction gate field effect transistors; power semiconductor devices; silicon compounds; wide band gap semiconductors; JFET; Peltier element; SiC; active Peltier cooling; active control electronics cooling; automotive inverter system; capacitors; cooling circuit; forced air-cooled inverter system; hybrid electric vehicles; internal combustion engine; power electronic converters; power semiconductor devices; power semiconductors; temperature 120 C; temperature 175 C; temperature 250 C; thermal interface materials; Capacitors; Converters; Heat sinks; Inverters; Junctions; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
ISSN :
1048-2334
Print_ISBN :
978-1-4244-8084-5
Type :
conf
DOI :
10.1109/APEC.2011.5744758
Filename :
5744758
Link To Document :
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