DocumentCode :
2867260
Title :
Robustness of RF MEMS capacitive switches in Harsh Environments
Author :
Goldsmith, C.L. ; Hwang, J.C.M. ; Gudeman, C. ; Auciello, O. ; Ebel, J.L. ; Newman, H.S.
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
RF MEMS switches have evolved significantly since the early days of testing unpackaged devices in an uncontrolled environment with failure modes that could only be guessed at. Today, MEMS switch technology has effective, RF-friendly wafer-level packaging, demonstrated temperature robustness, and failure modes that can be characterized and modeled from accelerated testing. This presentation overviews the advances in packaging, reliability, and environmental robustness for RF MEMS switches made on DARPA´s HERMIT program. It also includes more recent developments in novel nanostructured switch dielectrics, CMOS co-integration, intelligent CMOS control, and operation of RF MEMS in adverse thermal and radiation environments.
Keywords :
Atmospheric modeling; Micromechanical devices; Radio frequency; Robustness; Switches; Temperature measurement; CMOS; RF MEMS; environmental robustness; microwave switch; reliability; ultrananocrystalline diamond;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259627
Filename :
6259627
Link To Document :
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