DocumentCode
2867287
Title
A tolerance analysis for manufacturing to direct process capability improvement efforts
Author
Hirschman, Karl D.
Author_Institution
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
fYear
2000
fDate
2000
Firstpage
377
Lastpage
386
Abstract
A tolerance analysis for manufacturing which can be used to direct process capability improvement efforts is presented. This approach is a direct application of Taguchi´s Quality Engineering by Design (QED) techniques, and incorporates both process simulation and product manufacturing data. The resulting combination provides a useful weapon against variation to process and device engineers in a manufacturing environment. The focus is on determining an appropriate process variation reduction strategy in order to achieve device performance specifications. An illustrative case study is presented on the variation reduction of the nMOS threshold voltage (Vtn) in the RIT CMOS process. A tolerance reduction model is developed which determines where variation reduction efforts will be most rewarded. Based on this model, a practical tolerance reduction strategy is established
Keywords
MOSFET; Taguchi methods; semiconductor process modelling; tolerance analysis; NMOSFET; RIT CMOS process; Taguchi quality engineering by design; process capability; process simulation; product manufacturing; threshold voltage; tolerance analysis; variation reduction; CMOS process; Data engineering; Design engineering; MOS devices; Manufacturing processes; Semiconductor device modeling; Threshold voltage; Tolerance analysis; Virtual manufacturing; Weapons;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location
Boston, MA
ISSN
1078-8743
Print_ISBN
0-7803-5921-6
Type
conf
DOI
10.1109/ASMC.2000.902615
Filename
902615
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