DocumentCode :
2867287
Title :
A tolerance analysis for manufacturing to direct process capability improvement efforts
Author :
Hirschman, Karl D.
Author_Institution :
Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
fYear :
2000
fDate :
2000
Firstpage :
377
Lastpage :
386
Abstract :
A tolerance analysis for manufacturing which can be used to direct process capability improvement efforts is presented. This approach is a direct application of Taguchi´s Quality Engineering by Design (QED) techniques, and incorporates both process simulation and product manufacturing data. The resulting combination provides a useful weapon against variation to process and device engineers in a manufacturing environment. The focus is on determining an appropriate process variation reduction strategy in order to achieve device performance specifications. An illustrative case study is presented on the variation reduction of the nMOS threshold voltage (Vtn) in the RIT CMOS process. A tolerance reduction model is developed which determines where variation reduction efforts will be most rewarded. Based on this model, a practical tolerance reduction strategy is established
Keywords :
MOSFET; Taguchi methods; semiconductor process modelling; tolerance analysis; NMOSFET; RIT CMOS process; Taguchi quality engineering by design; process capability; process simulation; product manufacturing; threshold voltage; tolerance analysis; variation reduction; CMOS process; Data engineering; Design engineering; MOS devices; Manufacturing processes; Semiconductor device modeling; Threshold voltage; Tolerance analysis; Virtual manufacturing; Weapons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Conference_Location :
Boston, MA
ISSN :
1078-8743
Print_ISBN :
0-7803-5921-6
Type :
conf
DOI :
10.1109/ASMC.2000.902615
Filename :
902615
Link To Document :
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