• DocumentCode
    2867287
  • Title

    A tolerance analysis for manufacturing to direct process capability improvement efforts

  • Author

    Hirschman, Karl D.

  • Author_Institution
    Dept. of Microelectron. Eng., Rochester Inst. of Technol., NY, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    377
  • Lastpage
    386
  • Abstract
    A tolerance analysis for manufacturing which can be used to direct process capability improvement efforts is presented. This approach is a direct application of Taguchi´s Quality Engineering by Design (QED) techniques, and incorporates both process simulation and product manufacturing data. The resulting combination provides a useful weapon against variation to process and device engineers in a manufacturing environment. The focus is on determining an appropriate process variation reduction strategy in order to achieve device performance specifications. An illustrative case study is presented on the variation reduction of the nMOS threshold voltage (Vtn) in the RIT CMOS process. A tolerance reduction model is developed which determines where variation reduction efforts will be most rewarded. Based on this model, a practical tolerance reduction strategy is established
  • Keywords
    MOSFET; Taguchi methods; semiconductor process modelling; tolerance analysis; NMOSFET; RIT CMOS process; Taguchi quality engineering by design; process capability; process simulation; product manufacturing; threshold voltage; tolerance analysis; variation reduction; CMOS process; Data engineering; Design engineering; MOS devices; Manufacturing processes; Semiconductor device modeling; Threshold voltage; Tolerance analysis; Virtual manufacturing; Weapons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
  • Conference_Location
    Boston, MA
  • ISSN
    1078-8743
  • Print_ISBN
    0-7803-5921-6
  • Type

    conf

  • DOI
    10.1109/ASMC.2000.902615
  • Filename
    902615