Ultra compact, low thermal impedance and high reliability module structure with SiC Schottky Barrier Diodes

Author

Ikeda, Yoshinari ; Nashida, Norihiro ; Horio, Masafumi ; Takubo, Hiromu ; Takahashi, Yoshikazu

Author_Institution

Res. Center, Fuji Electr. Holdings Co., Ltd., Matsumoto, Japan

fYear

2011

fDate

6-11 March 2011

Firstpage

1298

Lastpage

1300

Abstract

An advanced module structure for taking advantage of superior characteristics of Silicon Carbide (SiC) device was researched and developed. This structure can realize about four times of power rating density and one half of thermal impedance compared to that of conventional structure. Also, this structure achieved to have higher reliability by applying epoxy molding structure and copper pin connection to conduct current to/from power chips instead of aluminum bonding wire.

Keywords

Schottky barriers; Schottky diodes; moulding; semiconductor device reliability; silicon compounds; wide band gap semiconductors; SiC; SiC Schottky barrier diodes; copper pin connection; epoxy molding structure; power chips; power rating density; reliability module structure; silicon carbide device; ultra compact low thermal impedance; Aluminum; Copper; Impedance; Packaging; Schottky diodes; Silicon carbide; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE

Conference_Location

Fort Worth, TX

ISSN

1048-2334

Print_ISBN

978-1-4244-8084-5

Type

conf

DOI

10.1109/APEC.2011.5744760

Filename

5744760