• DocumentCode
    2867333
  • Title

    A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS

  • Author

    Agah, Amir ; Hanafi, Bassel ; Dabag, Hayg ; Asbeck, Peter ; Larson, Lawrence ; Buckwalter, James

  • Author_Institution
    Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 45GHz Doherty power amplifier is implemented in 45nm SOI CMOS. Two-stack FET amplifiers are used as main and auxiliary amplifiers, allowing a supply voltage of 2.5V and high output power. The use of slow-wave coplanar waveguides (CPW) improves the PAE and gain by approximately 3% and 1dB, and reduces the die area by 20%. This amplifier exhibits more than 18dBm saturated output power, with peak power gain of 7dB. It occupies 0.64mm2 while achieving a peak PAE of 23%; at 6dB back-off the PAE is 17%.
  • Keywords
    Abstracts; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Gallium arsenide; Gold; HEMTs; CMOS SOI; Doherty power amplifier; millimeter-wave; power amplifiers; slow-wave CPW;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259632
  • Filename
    6259632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2867333