Title :
A 45GHz Doherty power amplifier with 23% PAE and 18dBm output power, in 45nm SOI CMOS
Author :
Agah, Amir ; Hanafi, Bassel ; Dabag, Hayg ; Asbeck, Peter ; Larson, Lawrence ; Buckwalter, James
Author_Institution :
Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, USA
Abstract :
A 45GHz Doherty power amplifier is implemented in 45nm SOI CMOS. Two-stack FET amplifiers are used as main and auxiliary amplifiers, allowing a supply voltage of 2.5V and high output power. The use of slow-wave coplanar waveguides (CPW) improves the PAE and gain by approximately 3% and 1dB, and reduces the die area by 20%. This amplifier exhibits more than 18dBm saturated output power, with peak power gain of 7dB. It occupies 0.64mm2 while achieving a peak PAE of 23%; at 6dB back-off the PAE is 17%.
Keywords :
Abstracts; CMOS integrated circuits; CMOS technology; Coplanar waveguides; Gallium arsenide; Gold; HEMTs; CMOS SOI; Doherty power amplifier; millimeter-wave; power amplifiers; slow-wave CPW;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259632
