DocumentCode
2867358
Title
Injection locking of 1320 nm quantum-dot lasers
Author
Goulding, David ; Hegarty, Stephen P. ; Melnik, Sergey ; Hartnett, Mark ; McInerney, John G. ; Huyet, Guillaume
Author_Institution
Dept. of Phys., Univ. Coll. Cork, Cork
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
We explore the optical injection locking dynamics of InGaAs quantum-dot lasers at 1320 nm and experimentally demonstrate bi-stability as well as multi-pulse excitability. The experimental results are well reproduced by rate-equation modelling.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser stability; laser theory; optical bistability; quantum dot lasers; semiconductor device models; multipulse excitability; optical bistability; optical injection locking dynamics; quantum-dot lasers; rate-equation modelling; wavelength 1320 nm; Injection-locked oscillators; Laser modes; Laser noise; Laser theory; Optical bistability; Optical distortion; Optical feedback; Quantum dot lasers; Quantum well lasers; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628000
Filename
4628000
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