Title :
Gain recovery dynamics in InAs-quantum dash optical amplifiers operating at 1550nm
Author :
Meier, J. ; Zilkie, A.J. ; Mojahedi, M. ; Aitchison, J.S. ; Wang, R.H. ; Rotter, T.J. ; Yang, C. ; Stintz, A. ; Malloy, K.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON
Abstract :
We report the first experimental characterization of the room temperature gain dynamics of InAs quantum dash optical amplifiers operating at wavelength of 1550 nm. A gain recovery time of 150 ps was observed.
Keywords :
III-V semiconductors; indium compounds; laser beams; optical materials; quantum dash lasers; semiconductor optical amplifiers; InAs; laser operation; quantum dash optical amplifiers; room temperature gain recovery dynamics; temperature 293 K to 298 K; time 150 ps; wavelength 1550 nm; Atomic force microscopy; Atomic layer deposition; Delay; Optical amplifiers; Optical signal processing; Probes; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics; (250.5980) Semiconductor optical amplifiers; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628001
