DocumentCode
2867399
Title
Low-driving-current 10-Gb/s direct modulation of temperature-stable 1.3-μm p-doped quantum-dot lasers between 20°C and 90°C
Author
Ishida, M. ; Hatori, N. ; Otsubo, K. ; Yamamoto, T. ; Nakata, Y. ; Ebe, H. ; Sugawara, M. ; Arakawa, Y.
Author_Institution
Inst. of Ind. Sci., Univ. of Tokyo, Tokyo
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Low-driving-current temperature-stable 10-Gb/s operation was realized at fixed modulation-current of 25.2-mAp-p and fixed bias-current of 23.4-mA between 20degC and 90degC in 1.3-mum p-doped quantum-dot lasers with optimized cavity structure.
Keywords
optical modulation; quantum dot lasers; bit rate 10 Gbit/s; current 23.4 mA; direct modulation; quantum-dot lasers; temperature 20 C to 90 C; wavelength 1.3 mum; Bandwidth; Laser modes; Laser theory; Modulation coding; Optical design; Optical modulation; Quantum dot lasers; Quantum well lasers; Reflectivity; Temperature dependence; (140, 2020) Diode lasers; (230, 5590) Quantum well devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628002
Filename
4628002
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