DocumentCode
2867414
Title
Improved 1.3 μm In(Ga)As quantum dot lasers by engineering the GaAs spacer layers
Author
Walker, C.L. ; Sandall, I.C. ; Smowton, P.M. ; Badcock, T.J. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution
Sch. of Phys. & Astron., Cardiff Univ., Cardiff
fYear
2006
fDate
21-26 May 2006
Firstpage
1
Lastpage
2
Abstract
Greatly improved threshold current and modal gain performance of 1.3 mum quantum dot lasers is achieved by engineering the GaAs spacer layers between dot layers to improve dot homogeneity and enable closer dot layers.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser beams; quantum dot lasers; semiconductor quantum dots; InGaAs-GaAs; dot homogeneity; dot layers; laser threshold current; modal gain performance; quantum dot lasers; spacer layers; wavelength 1.3 mum; Absorption; Gallium arsenide; Land surface temperature; Laser theory; Optical losses; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Threshold current; 140.5960 (Semiconductor lasers); 230.0250 (Optoelectronics);
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location
Long Beach, CA
Print_ISBN
978-1-55752-813-1
Electronic_ISBN
978-1-55752-813-1
Type
conf
DOI
10.1109/CLEO.2006.4628003
Filename
4628003
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