Title :
Improved 1.3 μm In(Ga)As quantum dot lasers by engineering the GaAs spacer layers
Author :
Walker, C.L. ; Sandall, I.C. ; Smowton, P.M. ; Badcock, T.J. ; Mowbray, D.J. ; Liu, H.Y. ; Hopkinson, M.
Author_Institution :
Sch. of Phys. & Astron., Cardiff Univ., Cardiff
Abstract :
Greatly improved threshold current and modal gain performance of 1.3 mum quantum dot lasers is achieved by engineering the GaAs spacer layers between dot layers to improve dot homogeneity and enable closer dot layers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; laser beams; quantum dot lasers; semiconductor quantum dots; InGaAs-GaAs; dot homogeneity; dot layers; laser threshold current; modal gain performance; quantum dot lasers; spacer layers; wavelength 1.3 mum; Absorption; Gallium arsenide; Land surface temperature; Laser theory; Optical losses; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stationary state; Threshold current; 140.5960 (Semiconductor lasers); 230.0250 (Optoelectronics);
Conference_Titel :
Lasers and Electro-Optics, 2006 and 2006 Quantum Electronics and Laser Science Conference. CLEO/QELS 2006. Conference on
Conference_Location :
Long Beach, CA
Print_ISBN :
978-1-55752-813-1
Electronic_ISBN :
978-1-55752-813-1
DOI :
10.1109/CLEO.2006.4628003
