Title :
GaN-FET based dual active bridge DC-DC converter
Author :
Costinett, Daniel ; Nguyen, Hien ; Zane, Regan ; Maksimovic, Dragan
Author_Institution :
Colorado Power Electron. Center, Univ. of Colorado at Boulder, Boulder, CO, USA
Abstract :
This paper describes a high step-down unregulated, fixed-ratio DC-DC converter (DCX) based on the dual active bridge (DAB) power stage operating at high switching frequency using enhancement-mode Gallium-Nitride-on-Silicon (GaN) transistors. The DAB power stage design as well as a comparison of losses using GaN and silicon MOS devices is based on a detailed state-plane analysis of resonant transitions. Experimental results are presented for a 150 W, 150-to-12 V prototype DCX operating at 1 MHz switching frequency.
Keywords :
DC-DC power convertors; III-V semiconductors; bridge circuits; field effect transistors; gallium compounds; resonant power convertors; DC-DC converter; GaN; dual active bridge power stage; field effect transistors; frequency 1 MHz; high switching frequency; power 150 W; resonant transitions; state-plane analysis; voltage 12 V to 150 V; Bridge circuits; Converters; Gallium nitride; Logic gates; Silicon; Switching frequency; Zero voltage switching;
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE
Conference_Location :
Fort Worth, TX
Print_ISBN :
978-1-4244-8084-5
DOI :
10.1109/APEC.2011.5744779
