GaN-FET based dual active bridge DC-DC converter

Author

Costinett, Daniel ; Nguyen, Hien ; Zane, Regan ; Maksimovic, Dragan

Author_Institution

Colorado Power Electron. Center, Univ. of Colorado at Boulder, Boulder, CO, USA

fYear

2011

fDate

6-11 March 2011

Firstpage

1425

Lastpage

1432

Abstract

This paper describes a high step-down unregulated, fixed-ratio DC-DC converter (DCX) based on the dual active bridge (DAB) power stage operating at high switching frequency using enhancement-mode Gallium-Nitride-on-Silicon (GaN) transistors. The DAB power stage design as well as a comparison of losses using GaN and silicon MOS devices is based on a detailed state-plane analysis of resonant transitions. Experimental results are presented for a 150 W, 150-to-12 V prototype DCX operating at 1 MHz switching frequency.

Keywords

DC-DC power convertors; III-V semiconductors; bridge circuits; field effect transistors; gallium compounds; resonant power convertors; DC-DC converter; GaN; dual active bridge power stage; field effect transistors; frequency 1 MHz; high switching frequency; power 150 W; resonant transitions; state-plane analysis; voltage 12 V to 150 V; Bridge circuits; Converters; Gallium nitride; Logic gates; Silicon; Switching frequency; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2011 Twenty-Sixth Annual IEEE

Conference_Location

Fort Worth, TX

ISSN

1048-2334

Print_ISBN

978-1-4244-8084-5

Type

conf

DOI

10.1109/APEC.2011.5744779

Filename

5744779