DocumentCode :
2867624
Title :
Passives partitioning for single package single chip SoC on 32nm RFCMOS technology
Author :
Kamgaing, Telesphor ; Rao, Valluri R.
Author_Institution :
Components Research, Intel Corporation, Chandler, AZ 85226 USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
Using a multilayer organic package substrate, we demonstrate that future system-on-chip with co-existing digital and radio integrated circuits can be partitioned to have critical RF inductors/transformers on package and active devices and capacitors on silicon, which enables cost and form factor reduction as well as design of radios on low resistivity substrate. As proof of concept, we present an example of silicon/package co-design, where a WLAN bandpass filter has been designed using 3D inductors on-package and multi-finger-capacitors on a 32nm silicon process. The design is validated both experimentally and through full wave electromagnetic simulation.
Keywords :
Band pass filters; CMOS integrated circuits; CMOS technology; Inductors; Radio frequency; Voltage-controlled oscillators; Filters; RF Passives; WLAN; capacitors; hybrid circuits; inductors; system-on-chip; transformers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259648
Filename :
6259648
Link To Document :
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