DocumentCode
2867624
Title
Passives partitioning for single package single chip SoC on 32nm RFCMOS technology
Author
Kamgaing, Telesphor ; Rao, Valluri R.
Author_Institution
Components Research, Intel Corporation, Chandler, AZ 85226 USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
Using a multilayer organic package substrate, we demonstrate that future system-on-chip with co-existing digital and radio integrated circuits can be partitioned to have critical RF inductors/transformers on package and active devices and capacitors on silicon, which enables cost and form factor reduction as well as design of radios on low resistivity substrate. As proof of concept, we present an example of silicon/package co-design, where a WLAN bandpass filter has been designed using 3D inductors on-package and multi-finger-capacitors on a 32nm silicon process. The design is validated both experimentally and through full wave electromagnetic simulation.
Keywords
Band pass filters; CMOS integrated circuits; CMOS technology; Inductors; Radio frequency; Voltage-controlled oscillators; Filters; RF Passives; WLAN; capacitors; hybrid circuits; inductors; system-on-chip; transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259648
Filename
6259648
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