• DocumentCode
    2867624
  • Title

    Passives partitioning for single package single chip SoC on 32nm RFCMOS technology

  • Author

    Kamgaing, Telesphor ; Rao, Valluri R.

  • Author_Institution
    Components Research, Intel Corporation, Chandler, AZ 85226 USA
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Using a multilayer organic package substrate, we demonstrate that future system-on-chip with co-existing digital and radio integrated circuits can be partitioned to have critical RF inductors/transformers on package and active devices and capacitors on silicon, which enables cost and form factor reduction as well as design of radios on low resistivity substrate. As proof of concept, we present an example of silicon/package co-design, where a WLAN bandpass filter has been designed using 3D inductors on-package and multi-finger-capacitors on a 32nm silicon process. The design is validated both experimentally and through full wave electromagnetic simulation.
  • Keywords
    Band pass filters; CMOS integrated circuits; CMOS technology; Inductors; Radio frequency; Voltage-controlled oscillators; Filters; RF Passives; WLAN; capacitors; hybrid circuits; inductors; system-on-chip; transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259648
  • Filename
    6259648