DocumentCode
2867767
Title
Shunt RF MEMS contact switch based on PZT-on-SOI technology
Author
Ivanov, Tony G. ; Pulskamp, Jeffrey S. ; Polcawich, Ronald G. ; Proie, Robert M.
Author_Institution
US Army Research Laboratory, Adelphi, MD 29783-1197, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
This paper presents a novel RF MEMS contact switch based on PZT-on-SOI technology. PZT transducers provide 0.7 mN contact force at 16V bias voltage. Single crystal Si actuators, formed from the SOI device layer, ensure 0.7 mN restoring force. The switch has −0.1 dB insertion loss, −29.0 dB return loss and −27.4 dB isolation at 2 GHz. Unpackaged devices were tested in a single-cycle-resolution reliability test system and demonstrated lifetime of 100 million cycles.
Keywords
Coplanar waveguides; Detectors; Films; Micromechanical devices; Radio frequency; Switches; Transducers; Microelectromechanical systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259656
Filename
6259656
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