Title :
Lithography for VLSI
Author_Institution :
IBM Corp., Hopwell Junction, NY, USA
Abstract :
VLSI technology will be limited by the lithographic capability available for pattern definition. There are several exposure techniques presently being considered and panelists will attempt to determine which options are most likely to be used. Three basic areas will be surveyed: will optical exposure be sufficient for 1 micrometer lithography or will it be necessary to use electron beam or x-ray systems; if optical systems are used, what is the limit on the optical capability; and if and when electron or x-ray systems are used, will they be economical for high volume parts.
Keywords :
Computed tomography; Costs; Electron beams; Electron optics; Manufacturing; Optical beams; Semiconductor device manufacture; Throughput; Very large scale integration; X-ray lithography;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1155967
