DocumentCode :
2867913
Title :
Microwave and high-speed GaAs technology
Author :
Cheng Wen
Author_Institution :
Rockwell International, Anaheim, CA, USA
Volume :
XXII
fYear :
1979
fDate :
14-16 Feb. 1979
Firstpage :
212
Lastpage :
212
Abstract :
Technology aspects that will be covered in this increasingly expanding area include GaAs materials, power FETs, high frequency FETs, microwave amplifier circuits, monolithic RF circuits, and monolithic digital signal processing circuits. The present status and future directions of the technology will also be discussed.
Keywords :
Aerospace electronics; Gallium arsenide; Instruments; Laboratories; Microwave circuits; Microwave communication; Microwave devices; Microwave technology; Microwave theory and techniques; Radar;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1979.1155968
Filename :
1155968
Link To Document :
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