DocumentCode
2868132
Title
Modeling chaos in on-chip ultra-wideband chaotic oscillator
Author
Park, Myunghwan ; Rodgers, John C. ; Lathrop, Daniel P.
Author_Institution
Institute for Research of Electronics and Applied Physics, University of Maryland, College Park, 20740, USA
fYear
2012
fDate
17-22 June 2012
Firstpage
1
Lastpage
3
Abstract
An ultra-wideband on-chip chaotic oscillator is demonstrated. This consists of a chaotic oscillator and a source follower buffer. Time evolution of output signal is highly aperiodic and frequency spectrum is widespread from DC to 300MHz. To model an inherent chaos in the circuit, CMOS inverter coupled with an electrostatic discharge protection circuit, gate-ground nMOS and gate source pMOS, is designed and fabricated. In the numerical model, three nonlinearities such as electrostatic discharge equivalent capacitance, high dynamic short current in the inverter, and transmission equivalent inductance are included. The results show that coupling between ESD current and supply current, and ESD rectification are the main causes to bring chaos in this structure.
Keywords
Capacitance; Chaotic communication; Electrostatic discharges; Logic gates; CMOS inverter; chaos; chaotic oscillator; electrostatic discharge; numerical model; ultra-wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location
Montreal, QC, Canada
ISSN
0149-645X
Print_ISBN
978-1-4673-1085-7
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2012.6259678
Filename
6259678
Link To Document