A 64Kb MOS dynamic RAM

Author

Ilbok Lee ; Yu, Rong ; Smith, Fernanda ; Wong, Simon ; Embrathiry, M.

Author_Institution

National Semiconductor Corp., Santa Clara, CA, USA

Volume

XXII

fYear

1979

fDate

14-16 Feb. 1979

Firstpage

146

Lastpage

147

Abstract

A memory cell using a three-layer polysilicon process will be reported. Described, too, will be a dummy cell and sense amplifier configuration.

Keywords

Clocks; Contacts; DRAM chips; Decoding; Dielectrics; MOS capacitors; Random access memory; Substrates; Switches; Turning;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International

Conference_Location

Philadelphia, PA, USA

Type

DOI

10.1109/ISSCC.1979.1155988

Filename

1155988

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