Title :
Full W-band power amplifier/combiner utilizing GaAs technology
Author :
Kim, Bumjin ; Tran, Alex ; Schellenberg, James
Author_Institution :
QuinStar Technology Inc., Torrance, CA, 90505, USA
Abstract :
This paper reports the first full-band, W-band (75–110 GHz) power amplifier utilizing GaAs MMICs. The MMIC, developed using a commercially available 0.1µm GaAs pHEMT process, demonstrated a small-signal gain of greater than 15 dB with a typical Psat of 14 dBm across W-band. Four of these MMICs were combined using a low-loss, 4-way septum combiner to produce an output power of 19 dBm ±1 dB across the 75 to 110 GHz band.
Keywords :
Gallium arsenide; Indium phosphide; Loss measurement; MMICs; PHEMTs; Power amplifiers; Power generation; GaAs; W-band; millimeter-wave integrated circuits (MMIC); power amplifier; septum combiner; solid-state;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259686
