Title :
Design and characterization of a SiGe RFICs for millimeter-wave radiometers
Author :
May, J.W. ; Uzunko, M. ; Rebeiz, G.M.
Author_Institution :
HRL Laboratories LLC, Malibu, CA 90265, USA
Abstract :
This paper presents the design and characterization of SiGe RFICs for millimeter-wave radiometers. It is seen that SiGe technology results in high gain millimeter-wave amplifiers, high responsivity detectors and low overall 1/f noise, making it ideal for on-chip radiometers. Two example radiometer systems, one at W-band and one at D-band, are presented in detail.
Keywords :
CMOS integrated circuits; Detectors; Noise; Radiometers; Silicon germanium; Switches; Switching circuits; Imaging Systems; Radiometers; SiGe;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259687
