• DocumentCode
    2868325
  • Title

    Low-Power mm-Wave Components up to 104GHz in 90nm CMOS

  • Author

    Heydari, Babak ; Bohsali, Mounir ; Adabi, Ehsan ; Niknejad, Ali M.

  • Author_Institution
    California Univ., Berkeley, CA
  • fYear
    2007
  • fDate
    11-15 Feb. 2007
  • Firstpage
    200
  • Lastpage
    597
  • Abstract
    A customized 90nm device layout yields an extrapolated fmax of 300GHz. The device is incorporated into a low-power 60GHz amplifier consuming 10.5mW, providing 12dB of gain, and an output P1dB of 4dBm. An experimental 3-stage 104GHz amplifier has a measured peak gain of 9.3dB. Finally, a Colpitts oscillator at 104GHz delivers up to -5dBm of output power while consuming 6mW.
  • Keywords
    low-power electronics; millimetre wave amplifiers; 10.5 mW; 104 GHz; 12 dB; 300 GHz; 6 mW; 60 GHz; 9.3 dB; 90 nm; low-power amplifier; low-power mm-wave components; CMOS technology; Capacitors; Extraterrestrial measurements; Frequency; Inductors; Oscillators; Phase noise; Power generation; Power measurement; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    1-4244-0853-9
  • Electronic_ISBN
    0193-6530
  • Type

    conf

  • DOI
    10.1109/ISSCC.2007.373363
  • Filename
    4242334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868325