Title :
A UHF class E2 DC/DC converter using GaN HEMTs
Author :
Marante, Reinel ; Ruiz, M. Nieves ; Rizo, Leysi ; Cabria, Lorena ; Garcia, Jose A.
Author_Institution :
Dept. of Communications Engineering, University of Cantabria, 39005 Santander, SPAIN
Abstract :
In this paper, the design of a class E2 resonant DC/DC converter, operating at UHF band, is proposed. Combining the use of GaN HEMT devices, both for the inverter and the synchronous rectifier, with high Q lumped-element multi-harmonic matching networks, a peak efficiency value of 72% has been obtained at 780 MHz with a 10.3 W output power. By means of a Pulse Width Modulation (PWM) over the gate driving envelope, the output voltage may be controlled while keeping low switching losses, with an estimated small-signal bandwidth (BW) and a slew rate of 11 MHz and 630 V/µSeg, respectively.
Keywords :
DC-DC power converters; Gallium nitride; HEMTs; Inverters; MODFETs; Pulse width modulation; Radio frequency; Class E; DC/DC converter; GaN HEMTs; UHF;
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2012.6259697
