DocumentCode
2868558
Title
Static bipolar RAM cell with compact punch-through loads
Author
Lohstroh, J.
Author_Institution
Philips Research Laboratory, Eindhoven, Netherlands
Volume
XXII
fYear
1979
fDate
14-16 Feb. 1979
Firstpage
14
Lastpage
15
Abstract
This paper will discuss a bipolar RAM cell with punch through loads. The read/standby current ratio can be more than four decades, so that a low standby power can be combined with a fast access time.
Keywords
Equations; Laboratories; Large scale integration; Power dissipation; Random access memory; Read-write memory; Resistors; Schottky diodes; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location
Philadelphia, PA, USA
Type
conf
DOI
10.1109/ISSCC.1979.1156007
Filename
1156007
Link To Document