Title :
Static bipolar RAM cell with compact punch-through loads
Author_Institution :
Philips Research Laboratory, Eindhoven, Netherlands
Abstract :
This paper will discuss a bipolar RAM cell with punch through loads. The read/standby current ratio can be more than four decades, so that a low standby power can be combined with a fast access time.
Keywords :
Equations; Laboratories; Large scale integration; Power dissipation; Random access memory; Read-write memory; Resistors; Schottky diodes; Switches; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1979.1156007
