DocumentCode
2868562
Title
A 72mW 0.03mm2 Inductorless 40Gb/s CDR in 65nm SOI CMOS
Author
Toifl, Thomas ; Menolfi, Christian ; Buchmann, Peter ; Hagleitner, Christoph ; Kossel, Marcel ; Morf, Thomas ; Weiss, Jonas ; Schmatz, Martin
Author_Institution
IBM, Rueschlikon
fYear
2007
fDate
11-15 Feb. 2007
Firstpage
226
Lastpage
598
Abstract
A quarter-rate CDR circuit is based on a dual-loop approach where sampling phases are generated by a phase-programmable PLL that is controlled by a digital DLL. Implemented in 65nm SOI CMOS, the chip occupies 0.03mm2 and consumes 1.8mW/Gb/s. Measurements confirm 40Gb/s operation with a BER <10-12 at a maximum frequency-offset of 400ppm. The phase relation between data and edge samples can be programmed within plusmn0.1 UI.
Keywords
CMOS integrated circuits; clocks; silicon-on-insulator; synchronisation; 65 nm; 72 mW; SOI CMOS; digital DLL; inductorless CDR; phase-programmable PLL; quarter-rate CDR circuit; Circuits; Clocks; Delay; Detectors; Filters; Phase detection; Phase locked loops; Phased arrays; Sampling methods; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
1-4244-0853-9
Electronic_ISBN
0193-6530
Type
conf
DOI
10.1109/ISSCC.2007.373376
Filename
4242347
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