• DocumentCode
    2868587
  • Title

    A 65mW 128K EB-ROM

  • Author

    Kiuchi, Kentaro ; Ieda, N. ; Takeya, K. ; Baba, Toshihiko

  • Author_Institution
    NTT Musashino Electrical Communication Lab., Tokyo, Japan
  • Volume
    XXII
  • fYear
    1979
  • fDate
    14-16 Feb. 1979
  • Firstpage
    12
  • Lastpage
    13
  • Abstract
    A high density 128K EB-ROM using direct electron-beam data writing and processes to provide 2μm patterns will be presented. The completed ROM has 200ns access time and 65mW power dissipation.
  • Keywords
    Capacitance; Clocks; Decoding; Inverters; Power dissipation; Read only memory; Solid state circuits; Transistors; Voltage; Writing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1979 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1979.1156009
  • Filename
    1156009
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868587