• DocumentCode
    2868589
  • Title

    Characterization of a 400-GHz SiGe HBT technology for low-power D-Band transceiver applications

  • Author

    Balteanu, A. ; Sarkas, I. ; Adinolfi, V. ; Dacquay, E. ; Tomkins, A. ; Celi, D. ; Chevalier, P. ; Voinigescu, S.P.

  • Author_Institution
    University of Toronto, Canada
  • fYear
    2012
  • fDate
    17-22 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    This paper describes a methodology for extracting the HICUM/L0 model of a 400-GHz SiGe HBT in the presence of strong self-heating. Good agreement is observed between measurements and simulations for DC characteristics, fT, fMAX, and Y parameters in a wide range of frequencies (DC to 170 GHz) and bias conditions. The low power capability of this process is demonstrated in a fundamental frequency 139–150 GHz VCO+16∶1 prescaler consuming less than 99 mW when operated from a 1.5V supply.
  • Keywords
    Calibration; Frequency measurement; Heterojunction bipolar transistors; Integrated circuit modeling; Scattering parameters; Semiconductor device measurement; Silicon germanium; D-Band; HICUM; Semiconductor device modeling; heterojunction bipolar transistors; prescaler; silicon-germanium; voltage-controlled oscillator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
  • Conference_Location
    Montreal, QC, Canada
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4673-1085-7
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2012.6259705
  • Filename
    6259705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2868589