Title :
High voltage, new driver IC technique based on silicon wafer direct-bonding (SDB)
Author :
Nakagawa, Akio ; Watanabe, Kiminori ; Yamaguchi, Yoshihiro ; Tsukakoshi, Tsuneo
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Two fundamental techniques are presented for high-voltage driver ICs: dielectric isolation based on silicon wafer direct-bonding (DISDB) and a high-voltage junction termination technique (SIPOS resistive field plate). The SIPOS plate shields the external electric field influence on breakdown voltage. DISDB integrates low-voltage logic and high-voltage (500 V) devices and has three structural variations corresponding to different application fields.<>
Keywords :
power integrated circuits; silicon; 500 V; DISDB; HVIC; SDB; SIPOS resistive field plate; Si; breakdown voltage; dielectric isolation; electric field; high-voltage junction termination; logic; power IC; silicon wafer direct-bonding; Breakdown voltage; Conductivity; Dielectric devices; Dielectric substrates; Diffusion bonding; Etching; Low voltage; MOSFETs; Silicon; Wafer bonding;
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18278
