DocumentCode :
2868634
Title :
A W-Band tunable Push-Push oscillator with 128X frequency division for frequency synthesis applications
Author :
Stuenkel, Mark ; Feng, Milton
Author_Institution :
University of Illinois at Urbana-Champaign, USA
fYear :
2012
fDate :
17-22 June 2012
Firstpage :
1
Lastpage :
3
Abstract :
This paper presents a W-Band Push-Push VCO with a 64X static frequency divider, for a total frequency division of 128X, using InP/InGaAs DHBT technology. The oscillator operates around a center frequency of 77.75 GHz with a measured phase noise of < −94 dBc/Hz at a 1 MHz offset, and employs a unique tuning methodology that uses only the intrinsic parasitics of the DHBTs to give a tuning range of 1.3 GHz. The oscillator, which includes buffers to drive the divider chain, has a power dissipation of 84 mW, one of the lowest power dissipations reported for a III–V DHBT based push-push oscillator.
Keywords :
DH-HEMTs; Frequency conversion; Frequency measurement; Frequency synthesizers; Phase noise; Tuning; Double heterojunction bipolar transistors; indium phosphide; microwave oscillators; millimeter wave integrated circuits; phase locked loops; voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Conference_Location :
Montreal, QC, Canada
ISSN :
0149-645X
Print_ISBN :
978-1-4673-1085-7
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2012.6259709
Filename :
6259709
Link To Document :
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