DocumentCode
2868639
Title
A 1800 V, 300 A nondestructive RBSOA tester for bipolar transistors
Author
Carpenter, Grant ; Lee, Fred C. ; Chen, Dan Y.
Author_Institution
Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
1988
fDate
11-14 April 1988
Firstpage
1330
Abstract
The design and fabrication of a 1800 V, 300 A nondestructive transistor reverse-bias second breakdown (RBSB) tester are reported. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. Its operation is described and comprehensive test results are presented.<>
Keywords
bipolar transistors; insulated gate field effect transistors; nondestructive testing; power transistors; semiconductor device testing; test equipment; 1800 V; 300 A; MOSFET shunt circuit; NDT; RBSB; SDT; bipolar transistors; design; fabrication; nondestructive testing; reverse-bias second breakdown; safe operating area; Bipolar transistors; Breakdown voltage; Capacitors; Circuit testing; Electric breakdown; Electronic equipment testing; Fabrication; MOSFETs; Nondestructive testing; Shunt (electrical);
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location
Kyoto, Japan
Type
conf
DOI
10.1109/PESC.1988.18279
Filename
18279
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