Title :
A 1800 V, 300 A nondestructive RBSOA tester for bipolar transistors
Author :
Carpenter, Grant ; Lee, Fred C. ; Chen, Dan Y.
Author_Institution :
Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The design and fabrication of a 1800 V, 300 A nondestructive transistor reverse-bias second breakdown (RBSB) tester are reported. An innovative MOSFET shunt circuit is the key to the high power capability of the tester. Its operation is described and comprehensive test results are presented.<>
Keywords :
bipolar transistors; insulated gate field effect transistors; nondestructive testing; power transistors; semiconductor device testing; test equipment; 1800 V; 300 A; MOSFET shunt circuit; NDT; RBSB; SDT; bipolar transistors; design; fabrication; nondestructive testing; reverse-bias second breakdown; safe operating area; Bipolar transistors; Breakdown voltage; Capacitors; Circuit testing; Electric breakdown; Electronic equipment testing; Fabrication; MOSFETs; Nondestructive testing; Shunt (electrical);
Conference_Titel :
Power Electronics Specialists Conference, 1988. PESC '88 Record., 19th Annual IEEE
Conference_Location :
Kyoto, Japan
DOI :
10.1109/PESC.1988.18279
